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| 28V N-Channel Power MOSFET General Description The AAT9512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTechTM's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package. AAT9512 Features * * * VDS(MAX) = 28V ID(MAX) 1 = 4.5A @ 25C Low RDS(ON): * 48 m @ VGS = 4.5V * 76 m @ VGS = 2.5V SC70JW-8 Package Applications * * * Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment D 8 Preliminary Information Top View D 7 D 6 D 5 1 S 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value 28 12 4.5 3.6 20 1.2 1.6 1.0 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150 C 1 Units V TA = 25C TA = 70C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25C TA = 70C Operating Junction and Storage Temperature Range W C Thermal Characteristics Symbol RJA RJA2 RJF Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 Value 102 78 35 Units C/W C/W C/W 9512.2003.04.0.61 1 28V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions Min 28 36 57 20 0.6 100 1 5 7 5 0.9 1 6 3 30 8 1.6 1.2 48 76 AAT9512 Typ Max Units V m A V nA A S DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A VGS=4.5V, ID=4.5A RDS(ON) Drain-Source ON-Resistance 2 VGS=2.5V, ID=3.6A ID(ON) On-State Drain Current 2 VGS=4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=250A IGSS Gate-Body Leakage Current VGS=12V, VDS=0V VGS=0V, VDS=28V IDSS Drain Source Leakage Current VGS=0V, VDS=23V, TJ=70C gfs Forward Transconductance 2 VDS=5V, ID=4.5A 3 Dynamic Characteristics QG Total Gate Charge VDS=15V, RD=3.0, VGS=4.5V QGS Gate-Source Charge VDS=15V, RD=3.0, VGS=4.5V QGD Gate-Drain Charge VDS=15V, RD=3.0, VGS=4.5V tD(ON) Turn-ON Delay VDD=15V, VGS=4.5V, RD=3.0, tR Turn-ON Rise Time VDD=15V, VGS=4.5V, RD=3.0, tD(OFF) Turn-OFF Delay VDD=15V, VGS=4.5V, RD=3.0, tF Turn-OFF Fall Time VDD=15V, VGS=4.5V, RD=3.0, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=4.5A IS Continuous Diode Current 1 nC RG=6 RG=6 RG=6 RG=6 ns V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RFA is determined by PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse width = 300 s. Note 3: Guaranteed by design. Not subject to production testing. 2 9512.2003.04.0.61 28V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 20 AAT9512 Transfer Characteristics 20 16 5V 4.5V 4V 3.5V 3V ID (A) 2.5V 2.V 16 VD = VG -55C 25C IDS (A) 12 12 125C 8 8 4 1.5V 0 0.5 1 1.5 2 4 0 0 0 1 2 3 4 VDS (V) VGS (V) On-Resistance vs. Drain Current 0.16 0.14 On-Resistance vs. Gate to Source Voltage 0.1 0.08 0.06 0.04 0.02 0 ID = 5A RDS(ON) () 0.1 0.08 0.06 0.04 0.02 0 0 5 10 VGS = 2.5V VGS = 4.5V 15 20 RDS(ON) () 0.12 0 1 2 3 4 5 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.8 Threshold Voltage 0.4 Normalized RDS(ON) VGS(th) Variance (V) 1.6 1.4 1.2 1 0.8 0.6 -50 VGS = 4.5V ID = 5A ID = 250A 0.2 0 -0.2 -0.4 -50 -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ (C) 9512.2003.04.0.61 TJ (C) 3 28V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Gate Charge 5 4 100 AAT9512 Source-Drain Diode Forward Voltage VD = 15V I D = 5A IS (A) 10 TJ = 150C VG (V) 3 2 1 1 0 0 1 2 3 4 5 TJ = 25C 0.1 0 0.5 1 1.5 QG, Charge (nC) VSD (V) Capacitance 750 Ciss Capacitance (pF) 600 450 300 Crss 150 Coss 0 0 10 20 30 VDS (V) 4 9512.2003.04.0.61 28V N-Channel Power MOSFET Ordering Information Package SC70JW-8 Marking1 GOXYY Part Number (Tape and Reel) AAT9512IJS-T1 AAT9512 Note: Sample stock is generally held on all part numbers listed in BOLD. Note 1: XYY = assembly and date code. Package Information 0.50 BSC 0.50 BSC 0.50 BSC 1.75 0.10 0.225 0.075 2.00 0.20 2.20 0.20 0.048REF 0.15 0.05 0.85 0.15 1.10 MAX 0.100 7 3 0.45 0.10 2.10 0.30 4 4 All dimensions in millimeters. 0.05 0.05 9512.2003.04.0.61 5 28V N-Channel Power MOSFET AAT9512 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 9512.2003.04.0.61 |
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